Gallium Arsenide (GaAs)

Gallium Arsenide (GaAs)

Il Gallium Arsenide (GaAs) è un cristallo con un’ottima stabilità chimica ed una buona trasmissione nel range 2-14μm

Specification
Transmission wavelength1000nm - 14000nm
MaterialGaAs
Density (gr/cm³)5.32 @300K
Dielectric constant12.85/10.88 @300K
Melting point (°C)1238
Band gap (ev)1.4
Thermal expansion coefficient (1/°C)5.7*10¯⁶ @300K
Thermal Conductivity (J/k.m.s.)55 @300K
Bulk modulus (Gpa)101.32
Shear modulus (Gpa)55.66 @298K
Knoop hardness (Kg/mm²)731
Young modulus (GPa)138.5
Poisson ratio0.31
Debye temperature (k)360
Absorption coefficient0.01 @2500nm-11000nm
Thermo-optical coefficient160-120*10¯⁶ @3000nm-12000nm

Gallium Arsenide (GaAs) windows

Technical parameterCommercial gradePrecision gradeHigh precision grade
Dimension range1-600mm2-600mm2-600mm
Dimension tolerance±0.1mm±0.025mm±0.01mm
Thickness tolerance±0.1mm±0.025mm±0.01mm
Angle tolerance±3'±15"±5"
Surface quality60-4040-2020-10
Surface accuracy1.0λλ/10λ/20
Coating3-5µm or 8-12µm AR, <5% per surface
Bevelling0.1-0.5mmx45°
SubstrateGallium Arsenide (GaAs)