03 Mag Gallium Arsenide (GaAs)
Posted at 22:26h
in GaAs
Specification | |
---|---|
Transmission wavelength | 1000nm - 14000nm |
Material | GaAs |
Density (gr/cm³) | 5.32 @300K |
Dielectric constant | 12.85/10.88 @300K |
Melting point (°C) | 1238 |
Band gap (ev) | 1.4 |
Thermal expansion coefficient (1/°C) | 5.7*10¯⁶ @300K |
Thermal Conductivity (J/k.m.s.) | 55 @300K |
Bulk modulus (Gpa) | 101.32 |
Shear modulus (Gpa) | 55.66 @298K |
Knoop hardness (Kg/mm²) | 731 |
Young modulus (GPa) | 138.5 |
Poisson ratio | 0.31 |
Debye temperature (k) | 360 |
Absorption coefficient | 0.01 @2500nm-11000nm |
Thermo-optical coefficient | 160-120*10¯⁶ @3000nm-12000nm |
Gallium Arsenide (GaAs) windows
Technical parameter | Commercial grade | Precision grade | High precision grade |
---|---|---|---|
Dimension range | 1-600mm | 2-600mm | 2-600mm |
Dimension tolerance | ±0.1mm | ±0.025mm | ±0.01mm |
Thickness tolerance | ±0.1mm | ±0.025mm | ±0.01mm |
Angle tolerance | ±3' | ±15" | ±5" |
Surface quality | 60-40 | 40-20 | 20-10 |
Surface accuracy | 1.0λ | λ/10 | λ/20 |
Coating | 3-5µm or 8-12µm AR, <5% per surface | ||
Bevelling | 0.1-0.5mmx45° | ||
Substrate | Gallium Arsenide (GaAs) |